Atmospheric Pressure Atomic Layer Epitaxy of ZnSe Using Zn and H₂Se

Abstract

Atmospheric pressure ALE (atomic layer epitaxy) has been achieved to grow ZnSe for the first time using Zn and H 2 Se. It is confirmed that the growth rate is controlled by the self-limiting process itself. The ALE growth of ZnSe is observed in the substrate temperature range of 350–500°C and in the input partial pressure ranges of 5×10 -6 –1×10 -4 atm for Zn and 4×10 -5 –2×10 -3 atm for H 2 Se. Lattice parameters perpendicular to the surface plane and the values of FWHM for the diffraction pattern were obtained by the X-ray double-crystal diffraction measurement.