Fabrication of Large‐Area Silicon Nanowire p–n Junction Diode Arrays

Abstract

Large‐area silicon nanowire p–n junction diode arrays (see Figure) have been fabricated by chemical etching of planar silicon p–n junction wafers in aqueous HF solution that contains appropriate amounts of silver nitrate near room temperature. The I–V characteristics have been measured using current‐sensing atomic force microscopy, and nonlinear and rectifying electrical transport behavior has been observed.