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Examination of In-Grown Stacking Faults in 8°- and 4°-Offcut 4H-SiC Epitaxy by Photoluminescence Imaging

Semiconductor TechnologyIn-grown Stacking FaultsElectrical EngineeringEngineeringCrystalline DefectsApplied PhysicsDefect Formation4°-Offcut 4H-sic EpitaxyPhotoluminescence ImagingSemiconductor Device FabricationMolecular Beam EpitaxyCarbide