Laser annealing of silicon on sapphire

Abstract

Silicon-implanted silicon-on-sapphire wafers have been annealed by 50-ns pulses from a Q-switched Nd : YAG laser. The samples have been analyzed by channeling and by ω-scan x-ray double diffraction. After irradiation with pulses of a fluence of about 5 J cm−2 the crystalline quality of the silicon layer is found to be better than in the as-grown state.