Journal of Vacuum Science and Technology · 1982 · 13 citations · 0 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsNuclear MaterialsThermal AnalysisDefects In Electronic MaterialsIon ImplantationRadiation Damage In MaterialsSemiconductor DefectsImplantation-induced Defect FormationIon Implantation EffectsLattice DamageRadiation Damage EffectsRutherford ScatteringSecondary Ion Mass SpectrometrySurface Condition AnalysisTemperature Dependence Of Radiation Damage
A preliminary investigation of the effects of implantation and annealing temperatures on implantation induced damage in HgCdTe was undertaken. Rutherford backscattering (RBS) channeling experiments were used to study the surface condition and distribution of implantation induced defects in the crystal. Secondary ion mass spectroscopy (SIMS) was used to determine the implanted boron profiles. The migration and depth distribution of defects under various thermal annealing conditions in HgCdTe implanted at room and liquid nitrogen temperatures are described.