The internal strain parameter of gallium arsenide measured by energy-dispersive X-ray diffraction

Abstract

The internal strain parameter of GaAs has been measured by observing the stress dependence of the integrated intensity of the weak 006 reflection, with the compressive stress along the (110) axis. An energy-dispersive technique was employed so that the reflection could be obtained at a photon energy close to the minimum in the structure factor, thereby approaching closely the strictly forbidden condition that applies at any energy in the diamond structure. A value A=-0.138+or-0.005, equivalent to a bond-bending parameter zeta =0.55+or-0.02, has been found. This is in good agreement with recent theoretical calculations and indirect determinations related to the band structure of GaAs.