Applied Physics Letters · 1976 · 30 citations · 7 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesMicrowave Semiconductor DevicesNoise In Electronic DevicesNoise In Semiconductor DevicesSemiconductor Device MaterialsSemiconductor PhysicsGaas Microwave Integrated CircuitsMolecular Beam EpitaxyNoise FigureNoise Figure AnalysisNoise In High-frequency Semiconductor DevicesSemiconductor Materials For Microwave DevicesSemiconductor Noise
GaAs metal-semiconductor field-effect transistors (MESFET) have been prepared by molecular-beam epitaxy. At 6 GHz a noise figure of 3 dB was obtained with a corresponding gain of 10 dB. The transconductance of the device was 28 mmhos and Fmax was approximately 35 GHz.
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Growth of Periodic Structures by the Molecular-Beam Method
A. Y. Cho · Applied Physics Letters · 1971 · 146 citations
GaAs IMPATT diodes prepared by molecular beam epitaxy
A. Y. Cho, Christopher N. Dunn, R.L. Kuvås et al. · Applied Physics Letters · 1974 · 45 citations