On the scaling issues and high-κ replacement of ultrathin gate dielectrics for nanoscale MOS transistors

High-κ gate dielectrics: Current status and materials properties considerations

G. D. Wilk, Robert M. Wallace, J. Anthony · Journal of Applied Physics · 2001 · 5.9K citations

Engineering, Materials Engineering, Materials Science +17

Band offsets of wide-band-gap oxides and implications for future electronic devices

John Robertson · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2000 · 2K citations

Engineering, Materials Engineering, Materials Science +17

Properties of Semiconductor Surface Inversion Layers in the Electric Quantum Limit

Frank Stern, W. E. Howard · Physical Review · 1967 · 1.9K citations

Engineering, Materials Engineering, Materials Science +14

Device scaling limits of Si MOSFETs and their application dependencies

D.J. Frank, R.H. Dennard, E. Nowak et al. · Proceedings of the IEEE · 2001 · 1.6K citations

Engineering, Computer Engineering, Electrical Engineering +17

On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration

S. Takagi, Akira Toriumi, M. Iwase et al. · IEEE Transactions on Electron Devices · 1994 · 1.5K citations

Engineering, Electrical Engineering, Materials Science +17