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On the scaling issues and high-κ replacement of ultrathin gate dielectrics for nanoscale MOS transistors

Semiconductor TechnologyElectrical EngineeringEngineeringTechnology ScalingNanoelectronicsNanotechnologyUltrathin Gate DielectricsApplied PhysicsBias Temperature InstabilityHigh-κ ReplacementMicroelectronicsScaling IssuesSemiconductor Device