Substitutional doping of photochemically-deposited amorphous hydrogenated silicon

Abstract

Physical properties of amorphous hydrogenated silicon produced by the direct photolysis of disilane have been investigated as a function of the doping ratio of phosphine and diborane. Boron doping resulted in a smooth increase of conductivity, while phosphorus doping revealed anomalous behavior of conductivity. Correspondingly, the growth rate was increased by boron doping and lowered by phosphorus doping. This was attributed to a remarkable difference in the optical absorption cross sections of phosphine and diborane.