Wide-spectrum, ultrasensitive fluidic sensors with amplification from both fluidic circuits and metal oxide semiconductor field effect transistors

Abstract

The authors report a sensing scheme to detect the translocation of small particles through a fluidic channel. The device connects the gate of a metal oxide semiconductor field effect transistor (MOSFET) with a fluidic circuit and monitors the FET’s drain current to detect particles. They demonstrate that amplification can be achieved from both the fluidic circuit and the MOSFET. The results show that a 0.7% volume ratio of the particle to the sensing microchannel can lead to 28%–56% modulation of the MOSFET’s drain current. The minimum volume ratio detected is 0.006%, which is about ten times smaller than the lowest detectable volume ratio reported in the literature.