Applied Physics Letters · 1994 · 45 citations · 8 references
Categoryquantum ElectronicsOptical MaterialsEngineeringOptoelectronic DevicesSemiconductorsPhotodetectorsOptical PropertiesCompound SemiconductorLong WavelengthPhotonicsElectrical EngineeringPhotoluminescencePhysicsInfrared PhotodetectorsOptoelectronic MaterialsLow Capture ProbabilitiesInfrared SensorApplied PhysicsQuantum Photonic DeviceOptoelectronicsInfrared Photodetector
We demonstrate a long wavelength (λc=20 μm) quantum well infrared photodetector using nonlattice matched InxGa1−xAs/GaAs materials system. High optical gains (low capture probabilities) were achieved by using GaAs as a barrier material in this system. A detectivity of D*=9.7×1010 cm√Hz/W at T=10 K has been achieved.
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