Applied Physics Letters · 2001 · 19 citations · 6 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsPhotovoltaic DevicesPhotovoltaic MaterialsSemiconductor Thin FilmsSilicon MaterialsSolar Cell MaterialsSolar CellsAbsorber MaterialsCharge Carrier DensityCharge ExtractionLight-absorbing LayersQuantum EfficiencySilicon Solar CellsSolar Cell CharacterizationThin-film Solar Cells
Thin-film microcrystalline silicon solar cells illuminated through the n layer were studied and compared with classical p-layer illuminated cells. To investigate the corresponding charge carrier extraction properties, variation of the intrinsic absorber layer thickness was carried out. It was found that the J–V characteristic and the quantum efficiency of the n- and p-side illuminated cells are almost identical in the thickness range investigated, up to 7 μm. No differences in the collection of photogenerated electrons or holes are observed. Hence, the illumination side of μc-Si:H single junction solar cells of conventional thickness may be randomly chosen without adverse effect on their performance.
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