Chemical beam epitaxy of Ga0.47In0.53As/InP quantum wells and heterostructure devices

SINGLE-CRYSTAL GALLIUM ARSENIDE ON INSULATING SUBSTRATES

H. M. Manasevit · Applied Physics Letters · 1968 · 422 citations

Natural Sciences, Materials Engineering, Materials Science +15

Interaction of Ga and As2 Molecular Beams with GaAs Surfaces

John R. Arthur · Journal of Applied Physics · 1968 · 385 citations

Natural Sciences, Materials Engineering, Condensed Matter Physics +5

Excitons in GaAs quantum wells

Robert C. Miller, D. A. Kleinman · Journal of Luminescence · 1985 · 267 citations

Engineering, Electrical Engineering, Physics +12

Chemical beam epitaxy of InP and GaAs

W. T. Tsang · Applied Physics Letters · 1984 · 255 citations

Engineering, Materials Engineering, Materials Science +17

Molecular Beam Epitaxy of GaAs and InP with Gas Sources for As and P

M. B. Panish · Journal of The Electrochemical Society · 1980 · 223 citations

Engineering, Materials Engineering, Materials Science +11