Concepedia
Microelectronic Engineering · 2007 · 28 citations · 27 references
Semiconductor TechnologyElectrical EngineeringEngineeringG/ω–v MeasurementsElectronic EngineeringApplied PhysicsAl–tiw–pd2si/n-si StructureMicroelectronicsSemiconductor Device
27
Extraction of Schottky diode parameters from forward current-voltage characteristics
S. K. Cheung, N.W. Cheung · Applied Physics Letters · 1986 · 2.7K citations
Device Modeling, Semiconductor Technology, Electrical Engineering +11
Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes
H.C. Card, E. H. Rhoderick · Journal of Physics D Applied Physics · 1971 · 1.8K citations
Engineering, Charge Transport, Semiconductor Device +16
A modified forward <i>I</i>-<i>V</i> plot for Schottky diodes with high series resistance
H. Norde · Journal of Applied Physics · 1979 · 1.4K citations
Electrical Engineering, Engineering, Physics +12
Metal-semiconductor contacts
M. Pepper · Physics in Technology · 1974 · 1.1K citations
Description of the SiO2Si interface properties by means of very low frequency MOS capacitance measurements
R. Castagné, A. Vapaille · Surface Science · 1971 · 521 citations