Influence of the Interface Acceptor-Like Traps on the Transient Response of AlGaN/GaN HEMTs

Abstract

In this letter, the effects of the interface acceptor-like traps on the transient responses of AlGaN/GaN high-electron mobility transistors (HEMTs) are investigated by means of experimental measurements and numerical simulations. The variation trends of the drain current <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$I_{DS}$</tex></formula> stimulated by the gate <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$(V_{GS})$</tex></formula> and drain <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$(V_{DS})$</tex></formula> turn-on voltage pulses have been analyzed. The successive numerical simulations are carried out on the test structure, into which a trapping region at the AlGaN/GaN interface is introduced. The same variation trends are observed on both of the simulated <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$V_{GS}$</tex></formula> and <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$V_{DS}$</tex> </formula> turn-on pulse measurements. The observation proves that the interface acceptor-like trap is the factor dominating the turn-on transient response of the HEMT devices.