Science · 1991 · 234 citations · 7 references
Natural SciencesMaterials EngineeringMaterials ScienceCondensed Matter PhysicsSemiconductor MaterialsThin FilmsScanning Probe MicroscopySemiconductor InterfacesSemiconductor PhysicsSemiconductor SurfacesSemiconductor Thin FilmsSurface PhysicsAdsorption On SemiconductorsAdsorption SitesScanning Tunneling SpectroscopySurface Adsorption SitesTunneling In SemiconductorsTwo-dimensional Semiconductor Interfaces
Studies of C(60) overlayer growth on GaAs(110) with scanning tunneling microscopy show large first monolayer islands that are locally well ordered, structurally stable, and commensurate with the GaAs surface owing to molecule-substrate interactions. Within the distorted close-packed structure, two distinct adsorption sites were identified, one of them being elevated because of stress in the C(60) monolayer.
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Harold W. Kroto, J. R. Heath, Sean C. O’Brien et al. · Nature · 1985 · 15.9K citations
Solid C60: a new form of carbon
Wolfgang Krätschmer, Lowell D. Lamb, K. Fostiropoulos et al. · Nature · 1990 · 7.6K citations
Atom-selective imaging of the GaAs(110) surface
R. M. Feenstra, Joseph A. Stroscio, J. Tersoff et al. · Physical Review Letters · 1987 · 613 citations
Imaging C60 clusters on a surface using a scanning tunnelling microscope
R. J. Wilson, Gerard Meijer, Donald S. Bethune et al. · Nature · 1990 · 255 citations · Full text
Natural Sciences, Materials Engineering, Materials Science +10