Ordered Overlayers of C ₆₀ on GaAs(110) Studied with Scanning Tunneling Microscopy

Abstract

Studies of C(60) overlayer growth on GaAs(110) with scanning tunneling microscopy show large first monolayer islands that are locally well ordered, structurally stable, and commensurate with the GaAs surface owing to molecule-substrate interactions. Within the distorted close-packed structure, two distinct adsorption sites were identified, one of them being elevated because of stress in the C(60) monolayer.