Anisotropic Galvanomagnetic Effects in Semiconductors

Abstract

The `many-valley' theory of the galvanomagnetic effects in cubic semiconductors proposed by Abeles and Meiboom is extended to include semiconductors belonging to any crystal class. The theory is applied to the crystal class 3bar above m. Explicit expressions for the components of the conductivity, Hall conductivity and magnetoconductivity tensors are derived for a six-valley model in which the energy extrema lie on the reflection planes in k-space. These expressions are consistent with preliminary measurements on a single crystal of n-type bismuth telluride in which all the galvanomagnetic effects are anisotropic.