Applied Physics Letters · 2000 · 39 citations · 8 references
EngineeringElectrical EngineeringMicroelectronicsOptoelectronicsPhotonicsDevice ScalingIntegrated PhotonicsLaser PhysicsOptical SourcesPhotonic Integrated CircuitsSemiconductor LasersCurrent DensityDifferential Quantum EfficiencyIntegrated LasersLaser ThresholdOptical EfficiencySingle-mode OperationThreshold VoltageVertical-cavity Surface-emitting Lasers
We present completely monolithic, single-step grown, bipolar cascade vertical-cavity surface-emitting lasers at 1.55 μm with a greater-than-unity differential quantum efficiency. A typical device had a threshold current density of 1 kA/cm2, a threshold voltage of 3.2 V, and demonstrated continuous wave operation up to 8 °C. Devices smaller than 10 μm in diameter lased single mode. Active regions in our device were epitaxially stacked in three stages. This technique of multiple-active regions enabled the greater-than-unity differential quantum efficiency operation, which is essential in constructing high-efficiency microwave optical links with gain. We report the device characteristics and a model on the scaling properties of active region stacking in multiple-active-region vertical-cavity lasers.
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Electrically-pumped, single-epitaxial VCSELs at1.55 µm with Sb-based mirrors
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