Electrically-pumped, single-epitaxial VCSELs at1.55 µm with Sb-based mirrors

E. Hall, Guilhem Almuneau, J.K. Kim, O. Sjölund, H. Kroemer, L.A. Coldren

Electronics Letters · 1999 · 43 citations · 4 references

Abstract

Electrically-pumped, Sb-based vertical-cavity lasers operating at 1.55 µm and produced in a single epitaxial growth have been demonstrated. These lasers, which employ AlGaAsSb mirrors and an AlInGaAs-based active region, have room temperature threshold current densities of 1.4 kA/cm2 and an external quantum efficiency of ~18%.

References

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