An MBE route towards CdTe/InSb superlattices

Abstract

As part of a program aimed at the growth of CdTe/InSb superlattices, a systematic study has been made of the MBE growth of heteroepitaxial CdTe layers on (001)InSb using substrate temperatures, Ts, significantly higher than have been previously reported. Using a modified two-step growth technique, high quality layers have been successfully grown at temperatures as high as 310 °C with no evidence of either preferential Cd loss or CdTe/InSb interdiffusion. The new growth technique is described and cross-sectional TEM and SIMS data from the grown layers is presented.