Electrical transport characteristics of Au/n-GaN Schottky diodes

Physics of Semiconductor Devices

Samarth Jain, S. Radhakrishna · 1987 · 4.2K citations

Engineering, Electrical Engineering, Physics +12

The Si-SiO₂Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance Technique

E. H. Nicollian, A. Goetzberger · Bell System Technical Journal · 1967 · 1.8K citations

Engineering, Electrical Engineering, Materials Science +17

Field and thermionic-field emission in Schottky barriers

Francesco Padovani, R. Stratton · Solid-State Electronics · 1966 · 1.3K citations

Natural Sciences, Materials Science, Physics +9

Normalized thermionic-field (T-F) emission in metal-semiconductor (Schottky) barriers

C.R. Crowell, V.L. Rideout · Solid-State Electronics · 1969 · 410 citations

Engineering, Electrical Engineering, Physics +10

Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300 °C

M. Asif Khan, M. S. Shur, John N. Kuznia et al. · Applied Physics Letters · 1995 · 273 citations

Engineering, Electrical Engineering, Materials Science +17