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Spin‐resonant change of unlocking stress for dislocations in silicon
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2005
Year
EngineeringMagnetic ResonanceUnlocking StressSpintronic MaterialSilicon On InsulatorSpin DynamicSpin ResonanceMagnetismMicrowave Magnetic FieldMaterials SciencePhysicsDefect FormationQuantum MagnetismSpintronicsDislocation InteractionNatural SciencesApplied PhysicsCondensed Matter PhysicsMagnetic PropertyMechanics Of Materials
In this work we have observed a significant increase of unlocking stress for dislocations in Cz-Si caused by the microwave magnetic field in a condition of spin resonance corresponding to g-factor value of about 2.0. The result can be interpreted in terms of spin-dependent reactions of oxygen accumulated at dislocations. However, the specific atomistic model for the effect is still missing. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)