High temperature, high power InGaAs/GaAs quantum-well lasers with lattice-matched InGaP cladding layers

Abstract

The authors report the high-temperature and high-power operation of strained-layer InGaAs/GaAs quantum well lasers with lattice-matched InGaP cladding layers grown by gas-source molecular beam epitaxy. Self-aligned ridge waveguide lasers of 3- mu m width were fabricated. These lasers have low threshold currents (7 mA for 250- mu m-long cavity and 12 mA for 500- mu m-long cavity), high external quantum efficiencies (0.9 mW/mA), and high peak powers (160 mW for 3- mu m-wide lasers and 285 mW for 5- mu m-wide laser) at room temperature under continuous wave (CW) conditions. The CW operating temperature of 185 degrees C is the highest ever reported for InGaAs/GaAs/InGaP quantum well lasers, and is comparable to the best result (200 degrees C) reported for InGaAs/GaAs/AlGaAs lasers.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>