Short-wavelength (≲6400 Å) room-temperature continuous operation of <i>p</i>-<i>n</i> In0.5(Al<i>x</i>Ga1−<i>x</i>)0.5P quantum well lasers

Abstract

Data are presented demonstrating short-wavelength (≲6400 Å) continuous (cw) laser operation of p-n diode In0.5(AlxGa1−x)0.5P multiple quantum well heterostructure (QWH) lasers grown lattice matched on GaAs substrates using metalorganic chemical vapor deposition. In the range from −30 °C to room temperature (RT≊300 K, λ≊6395 Å) the threshold current density changes from 2.3×103 A/cm2 (−30 °C) to 3.7×103 A/cm2 (RT, 300 K). The cw 300 K photopumped laser operation of the same quaternary QWH crystal is an order of magnitude lower in threshold (7×103 W/cm2, Jeq∼2.9×103 A/cm2) than previously reported for this crystal system, and agrees with the successful demonstration of cw 300 K laser diodes at this short wavelength.