Nonvolatile multilevel memory effect in Cu/WO₃/Pt device structures

Abstract

Abstract The multilevel storage properties of Cu/WO 3 /Pt structure devices are demonstrated. By the application of suitable compliance current values, the Cu/WO 3 /Pt memory device can be driven to various resistance states. Some distinguishable states are reproducible over 100 dc switching cycles, and such states remain stable over 10 4 seconds. The multilevel memory effect in the Cu/WO 3 /Pt device can be attributed to the combination of the radial growth of filaments and the formation of more conductive filaments when applying a higher compliance current during the set process. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)