The influence of preparation conditions on the hydrogen content of amorphous glow-discharge silicon

Abstract

The hydrogen content in a-Si films prepared by the glow-discharge technique has been studied as a function of preparation conditions. From the γ-ray yield of the nuclear reaction 1H(15N,αγ) 12C we find hydrogen contents ranging from 4 up to 50 at.%, depending largely on the deposition temperature of the films. Depth profiles show that hydrogen is incorporated uniformly into the films.