Observation of configuration switching of the D center in a-Si:H

Measurement of the density of gap states in hydrogenated amorphous silicon by space charge spectroscopy

D. V. Lang, J. David Cohen, J. P. Harbison · Physical review. B, Condensed matter · 1982 · 475 citations

Engineering, Materials Science, Physics +17

Electron Spin Resonance of Doped Glow‐Discharge Amorphous Silicon

H. Dersch, J. Stuke, J. Beichler · physica status solidi (b) · 1981 · 276 citations

Natural Sciences, Materials Science, Physics +16

Structure and Electronic States in Disordered Systems

Yaneer Bar-Yam, David Adler, John D. Joannopoulos · Physical Review Letters · 1986 · 172 citations

Natural Sciences, Materials Science, Physics +17

Method for Direct Determination of the Effective Correlation Energy of Defects in Semiconductors: Optical Modulation Spectroscopy of Dangling Bonds

Z. Valy Vardeny, J. Tauc · Physical Review Letters · 1985 · 137 citations

Natural Sciences, Materials Science, Physics +17

Identification of the Dangling-Bond State within the Mobility Gap of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>a</mml:mi></mml:math>-Si: H by Depletion-Width-Modulated ESR Spectroscopy

J. David Cohen, J. P. Harbison, K. W. Wecht · Physical Review Letters · 1982 · 127 citations

Natural Sciences, Materials Science, Physics +17