A new physics-based model for TANOS memories program/erase

Abstract

We present a new physics-based model able to reproduce the program/erase transients in TANOS memories, accurately describing the charge trapping/detrapping dynamics in the nitride layer. Modeling results are extensively validated against a large number of experimental data taken on samples with different gate stack compositions, considering a quite extended range of program/erase voltages and times. The good agreement between experimental and simulated results makes the developed model a useful tool for the assessment of the performance achievable by the TANOS technology.