Proceedings of the IEEE · 1993 · 41 citations · 80 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesIii-v SemiconductorsMicrowave Integrated CircuitsMicrowave Semiconductor DevicesSemiconductor Device MaterialsSemiconductor HeterostructuresEpitaxial MaterialsGaas Microwave Integrated CircuitsGaas Monolithic Microwave Integrated CircuitsHeterojunction Bipolar TransistorsHigh-frequency ElectronicsMicrowave DevicesMonolithic Microwave Integrated CircuitsSemiconductor Materials For Microwave Devices
The status of the microwave GaAs heterojunction bipolar transistor (HBT) technology is reviewed. Microwave circuits for advanced military and commercial systems continue to increase their dependence on the performance, functionality, and cost of active components fabricated using solid-state technology. The performance advantages provided by GaAs HBT's, for several critical circuit applications, have stimulated a worldwide development activity. Progress in HBT device technology and microwave circuit applications has been extremely rapid because of the broad availability of III-V compound semiconductor epitaxial materials and prior experience with GaAs field-effect transistors (FET's) and monolithic microwave integrated circuits (MMIC's). The great flexibility of HBT's in microwave circuits makes them prime candidates for applications in complex multifunctional microwave/digital IC's in next-generation systems.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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