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Comparison of time‐resolved photoluminescence from InGaN single quantum wells grown on nonpolar and semipolar bulk GaN substrates
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2009
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SemiconductorsPhotonicsPhotoluminescenceEngineeringPhysicsApplied PhysicsAluminum Gallium NitrideSemipolar SubstratesBulk Gan BoulesGan Power DeviceOptoelectronic DevicesCategoryiii-v SemiconductorOptoelectronicsCarrier LocalizationCompound SemiconductorTime‐resolved Photoluminescence
Abstract Single quantum wells of low InN concentration InGaN grown on high quality nonpolar and semipolar substrates cut from bulk GaN boules are studied by time‐resolved photoluminescence techniques. Data is presented for different well widths at varying pump fluence and sample temperature to study nonlinear non‐radiative recombination, radiative lifetimes, and carrier localization or separation. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)