Impact ionization in Al<i>x</i>Ga1−<i>x</i>As for <i>x</i>=0.1–0.4

Abstract

The impact ionization coefficients in AlxGa1−xAs have been experimentally determined for compositions x≤0.4. These data are necessary for accurate device design and modeling. Both α, the electron ionization coefficient, and β, the hole ionization coefficient, decrease with increasing x, and there is no appreciable change in the ratio α/β over the range of compositions and electric fields studied.