Electrical properties of molecular beam epitaxy produced HgCdTe layers doped during growth

Abstract

Electrical characterizations of n- and p-type mercury cadmium telluride epitaxial layers intentionally doped during their growth by the molecular beam epitaxy technique are reported. The doping by stoichiometry adjustment can produce good mobility material of both n or p semiconductor types. However, p-type material is feasible only for cadmium fraction (x) greater than 0.2, whereas the n-type conduction is possible only for x less than 0.3. For the first time in situ doping of HgCdTe by indium is reported. It is incorporated in the material during the growth and behaves as a n-type dopant. Carrier concentrations up to 1018 cm−3 have been obtained. An indium doped layer having a cadmium fraction of 0.55 was also found to be n-type.