The determination of low dose boron implanted concentration profiles in silicon by the (n,α) reaction

Theoretical Considerations on Lateral Spread of Implanted Ions

Seijiro Furukawa, Hideki Matsumura, Hiroshi Ishiwara · Japanese Journal of Applied Physics · 1972 · 204 citations

Engineering, Materials Science, Electronic Materials +7

Technique for determining concentration profiles of boron impurities in substrates

J. F. Ziegler, G.W. Cole, J. E. E. Baglin · Journal of Applied Physics · 1972 · 142 citations

Natural Sciences, Materials Science, Physics +10

Boron atom distributions in ion-implanted silicon by the (<i>n</i>,4He) nuclear reaction

J. F. Ziegler, B. L. Crowder, G.W. Cole et al. · Applied Physics Letters · 1972 · 41 citations

Engineering, Materials Science, Physics +13

Specific energy loss of 4He ions in silicon (amorphous, polycrystalline, and single crystal)

J. F. Ziegler, M. H. Brodsky · Journal of Applied Physics · 1973 · 37 citations · Full text

Engineering, Materials Engineering, Materials Science +14

Alpha-particle stopping cross section of silicon and germanium

W. K. Lin, H. G. Olson, D. Powers · Journal of Applied Physics · 1973 · 25 citations

Natural Sciences, Physics, Nuclear Physics +12