Injection InGaSbAs lasers emitting radiation of wavelengths 1.9–2.3μ at room temperature

Abstract

Double GaAlSbAs/InGaSbAs/GaAlSbAs heterostructures were grown by the method of liquid phase epitaxy on (100) faces of p-type GaSb substrates. Pulsed lasing was observed in the wavelength range 1.9–2.3 μ at room temperature. The threshold current density at the wavelength of 2.29 μ was 20 kA/cm2. This was the longest wavelength emitted by an uncooled injection laser.