Charge Buildup in Magnetized Process Plasma

Abstract

The charge buildup in a magnetron etcher has been studied experimentally for two different magnet arrangements and theoretically on the basis of an equivalent circuit model. Wafer charging measured with a metal-Si 3 N 4 -SiO 2 -Si (MNOS) capacitor is negative along the centerline of the magnet poles and positive between the magnets in both cases. Wafer charging is explained either by curtent crowding at the center of the magnet poles or by the nonambipolar diffusion effect.