A Radiation Hardened 16-Mb SRAM for Space Applications

Abstract

A new high density, high performance 16-Mb static random access memory (SRAM) is being developed in a 0.15 mum CMOS RH15 technology for use in space and other strategic radiation hardened applications. The SRAM design is implemented in a 1.5 Volt, 0.15 micron and seven-layer metal CMOS technology. Using integrated process features and advanced design techniques, a small cell size of 9.3 mum <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> was utilized while achieving a SEU radiation hardness of less than IE-12 upsets/bit-day and a worst-case chip performance of less than 15 ns access time.