IEEE Transactions on Electron Devices · 1990 · 49 citations · 32 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsCarrier TransportDevice ModelingField-effect TransistorsNoise In Electronic DevicesNoise In Semiconductor DevicesSemiconductor PhysicsCarrier ConcentrationDevice Noise CharacterizationFermi LevelNoise Analysis In Integrated CircuitsNoise CharacteristicsNoise FigureNoise In Field-effect TransistorsTransistor Noise
A practical model for DC, small-signal, and noise characteristics in two-dimensional electron gas field-effect transistors is discussed. The model includes accurate charge-control characteristics based on analytical functions relating carrier concentration to Fermi level. This model allows the influence of drain current, frequency, and device parameters on the noise figure (NF) to be studied. The theory explains the experimentally observed trend in NF behaviors.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
32
Horst Rothe, Walter E. Dahlke · Proceedings of the IRE · 1956 · 417 citations
Thermal Noise in Field-Effect Transistors
A. Der Ziel · Proceedings of the IRE · 1962 · 345 citations