Monte Carlo simulation of depth and lateral profiles of boron atoms implanted in polycrystalline silicon

Abstract

A Monte Carlo calculation technique has been applied to ion implantation. The theory was compared with both the depth distribution of 150-keV boron implanted in silicon, measured with a secondary-ion mass spectrometer (Hitachi IMA-2) and an Auger electron spectrometer (PHI model 5000), and the lateral spread of the implanted boron, measured by Akasaka et al. The results indicate that the theory describes the three-dimensional distribution of boron implanted in polycrystalline silicon at 150 keV with considerable success.