Intrinsic electronic transport properties of organic field-effect transitors based on single crystalline tetramethyltetraselenafulvalene

Abstract

We report the fabrication of field-effect transistors on single crystals of the highly anisotropic organic semiconductor tetramethyltetraselenafulvalene. We find maximum mobilities of 0.2 cm2/V s at room temperature. We observe an exponential decrease of mobility with decreasing temperature with an activation energy 160±30 meV, independent of sample quality or fabrication method.