Synthesis, lattice structure, and band gap of ZnSnN2

Superior radiation resistance of In1−xGaxN alloys: Full-solar-spectrum photovoltaic material system

Junqiao Wu, W. Walukiewicz, K. M. Yu et al. · Journal of Applied Physics · 2003 · 605 citations

Wide-bandgap Semiconductor, Engineering, Optoelectronic Devices +22

Band Gap of Hexagonal InN and InGaN Alloys

V. Yu. Davydov, A. A. Klochikhin, V. V. Emtsev et al. · physica status solidi (b) · 2002 · 306 citations · Full text

Optical Materials, Engineering, Optical Absorption +21

Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices

Robert M. Farrell, Erin C. Young, Feng Wu et al. · Semiconductor Science and Technology · 2012 · 272 citations

Aluminium Nitride, Wide-bandgap Semiconductor, Optical Materials +19

Structure and electronic properties of InN and In-rich group III-nitride alloys

W. Walukiewicz, Joel W. Ager, K. M. Yu et al. · Journal of Physics D Applied Physics · 2006 · 247 citations

Wide-bandgap Semiconductor, Engineering, Cubic Boron Nitride +22

Structural and Optoelectronic Characterization of RF Sputtered ZnSnN₂

Lise Lahourcade, Naomi C. Coronel, Kris T. Delaney et al. · Advanced Materials · 2013 · 195 citations

Materials Science, Crystal Structure, Electrical Engineering +13