Room-temperature excitons in Ga0.47In0.53As-InP superlattices grown by low-pressure metalorganic chemical vapor deposition

Abstract

Very high quality Ga0.47In0.53As-InP heterojunctions, quantum wells, and superlattices have been grown by low-pressure metalorganic chemical vapor deposition. Excitation spectroscopy shows evidence of strong and well-resolved exciton peaks in the luminescence and excitation spectra of GaInAs-InP quantum wells. Optical absorption spectra show room-temperature excitons in GaInAs-InP superlattices.