Japanese Journal of Applied Physics · 1976 · 35 citations · 3 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsSemiconductor MaterialsSolid State PhysicsCarrier TransportElectronic Transport ModelingMetalsSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor PhysicsAlloy SemiconductorsCarrier Mobility ModelingCarrier Transport In SemiconductorsElectron Transport In SemiconductorsElectron Transport In SolidsScatteringTransport In SemiconductorsVacancy Clusters
By assuming potential clusters as one of the scattering centers for electrons in ternary alloy semiconductors, the drift mobility of electrons was calculated and compared with experimental results in (In1-xGax)As, (In1-xGax)Sb and In(As1-xPx). An explanation of the experimental results using the present model is given.
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ENERGY-GAP VARIATION IN MIXED III–V ALLOYS
Alan Thompson, J. C. Woolley · Canadian Journal of Physics · 1967 · 148 citations