Hydrogenation of 6H-SiC as a surface passivation stable in air

Ideal hydrogen termination of the Si (111) surface

G. S. Higashi, Yves J. Chabal, Gary W. Trucks et al. · Applied Physics Letters · 1990 · 1.4K citations

Natural Sciences, Chemistry, Materials Science +17

Unusually Low Surface-Recombination Velocity on Silicon and Germanium Surfaces

Eli Yablonovitch, David L. Allara, Che-Chen Chang et al. · Physical Review Letters · 1986 · 955 citations

Natural Sciences, Chemistry, Materials Science +17

Infrared spectroscopy of Si(111) and Si(100) surfaces after HF treatment: Hydrogen termination and surface morphology

Yves J. Chabal, G. S. Higashi, K. Raghavachari et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1989 · 664 citations

Natural Sciences, Chemistry, Materials Science +17

Oxidation of HF-treated Si wafer surfaces in air

D. Gräf, M. Grundner, Robert Schulz et al. · Journal of Applied Physics · 1990 · 230 citations

Natural Sciences, Materials Engineering, Materials Science +17

Step bunching mechanism in chemical vapor deposition of 6H– and 4H–SiC{0001}

Tsunenobu Kimoto, Akira Itoh, Hiroyuki Matsunami et al. · Journal of Applied Physics · 1997 · 171 citations

Engineering, Materials Engineering, Materials Science +17