Line defects in two-dimensional four-beam interference patterns

Abstract

We have studied laser interference patterns, which consist of line defects on the surface of a GaAs substrate, generated by four-beam interference lithography. The orientation and periodicity of the defects are shown to depend on the configuration of the incident laser beams, while the widths of the defects are modified by varying the beam intensity. Influences of the phase and polarization on the simulated patterns are discussed.