IEEE Transactions on Electron Devices · 1987 · 52 citations · 10 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesTransport PhenomenaCarrier TransportDevice ModelingDevice SimulationElectron TransportHigh-frequency Semiconductor DevicesSemiconductor PhysicsCarrier Transport ModelingCurrent ContinuityField-effect Transistor SimulationGeometry FactorNumerical SimulationQuasi-two-dimensional ModelingSemiconductor Device ModelingTransport Equations
A numerical simulation of GaAs MESFET structures is presented. The approach taken in this paper combines an analytical solution with a full simulation. Poisson's equation, the current continuity equation, and an electron-temperature equation are formulated in terms of a geometry factor that defines the shape of the conducting channel in the MESFET. The transport equations are then solved in one dimension and the channel geometry factor is found analytically. This method was found to be considerably faster than full two-dimensional simulations. The model has been compared to full two-dimensional drift-diffusion and energy-momentum results to determine its validity.
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