p‐Type Conduction Characteristics of Lithium‐Doped ZnO Nanowires

Abstract

p-type ZnO nanowires (NWs) based on a simple hydrothermal technique with a lithium dopant are demonstrated. It is demonstrated that Li substitution of Zn occurrs because of thermally induced migration due to post-annealing in the presence of oxygen. The stable formation of p-type ZnO:Li NWs is revealed using a NW field-effect transistor and a simple n-type ZnO thin film/p-type annealed ZnO:Li NW homojunction diode. Detailed facts of importance to specialist readers are published as ”Supporting Information”. Such documents are peer-reviewed, but not copy-edited or typeset. They are made available as submitted by the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.