Journal of The Electrochemical Society · 1963 · 18 citations · 0 references
Natural SciencesMaterials EngineeringMaterials ScienceChemical KineticsSemiconductor MaterialsThin FilmsCrystal GrowthEpitaxial GrowthEtching ProcessesKinetic ModelingSemiconductor Crystal GrowthThin Film EtchingEpitaxial Film GrowthEpitaxial Growth KineticsEpitaxial MaterialsKinetic TheoryReaction Mechanism DerivationThin-film Growth KineticsVapor GrowthVapor Phase Etching
A kinetic theory has been derived for the origin of autodoping in epitaxial vapor grown films based on the transient behavior of a general reaction mechanism. This mechanism is the series combination of an etching and growth reaction. A particular case is solved explicitly in closed form, and the behavior of more general cases is indicated.