Characteristics of Gate-All-Around Junctionless Poly-Si TFTs With an Ultrathin Channel

Abstract

This letter demonstrates for the first time junctionless (JL) gate-all-around (GAA) poly-Si thin-film transistors (TFTs) with ultrathin channels (2 nm). The subthreshold swing is 61 mV/decade and the ON/OFF current ratio is close to 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">8</sup> because of the excellent gate controllability and ultrathin channel. The JL-GAA TFTs have a low drain-induced barrier lowering value of 6 mV/V, indicating greater suppression of the short-channel effect than in JL-planar TFTs. The cumulative distribution of electrical parameters in JL-GAA is small. Therefore, the proposed JL-GAA TFTs of excellent device characteristics along with simple fabrication are highly promising for future system-on-panel and system-on-chip applications.