EMI comparison between Si and SiC technology in a boost converter

Abstract

In this paper we present a comparison of the EMI generated by a dc-dc boost converter, using silicon (Si) or silicon-carbide (SiC) diodes and/or MOSFET. EMI was compared using Si technology as reference. The comparison parameters were the switching times, and the conducted and radiated EMI. The paper shows that the use of SiC diode has great influence on the radiated EMI. The use of SiC MOSFET combined with Si diode reduces the radiated and conducted EMI generated by the converter.