Design of high-temperature SiC three-phase AC-DC converter for >100°C ambient temperature

Abstract

High temperature (HT) converters have become more and more important in industrial applications where the converters will operate in a harsh environment. These environments require the converter to have not only high-temperature semiconductor devices (SiC, GaN) but also high-temperature control electronics. This paper describes a design process for a three-phase PWM rectifier. The SiC JFET planar structure is used for the main semiconductor devices. Other high-temperature components, including the passive components, silicon-on-insulator chips and the auxiliary components are studied and summarized. Finally, a 1.4 kW lab prototype is fabricated and tested for verification.